Executive Summary:Bilingual and Bicultural senior Executive with strong background in semiconductor industries. Both marketing and technical capabilities to support company in the early market entry stage. Along with his wide personal channels, his vertically integrated experience, starting from material science, semiconductor device technology, to product marketing with system application, will help a company who is willing to develop a new and emerging business in Japan, especially through necessary arrangements for collaborative partnership and/or alliance with local companies.
Work Experience:Over 30 years experience on semiconductor industry, starting from R&D for new materials/process technologies, development of commercial products, to building up new business. Pioneering works for GaAs LSI and FeRAM areas where, based on immature technologies like GaAs and ferro-electronic materials at the beginning, successfully established 100 M$ class businesses the applications to high speed/frequency LSIs and secure non-volatile memory, respectively. Experienced in new application and market developments synchronized with technology and product developments in the following areas; Security & Smartcard, RF Tags, microwave & mm-wave devices, Non-volatile memory, and corresponding eco-systems
Speciality:* Business incubation and development with immature technology and products
* Eco-system development, partnering and alliance promotion
* Security devices, SIM, Contact-less smartcard and RF-ID
* Non-volatile memory applications, FeRAM, Flash memory
* High speed, high frequency device for telecom applications
Detailed Resume:Present
Vice President, Business Incubation, foreign capital semiconductor company in Japan
- Business incubation and new business development beyond the company’s commodity memory market. Primary focus was to develop security applications of Flash memory with global eco-system partners including service providers, operators, handset OEMs and card OEMs.
Oct. 2004
Chief Project Manager for RFID Development and Commercialization, Fujitsu Ltd.
- Strategic planning and coordination of the program for RFID system development including UHF tag with FRAM chips, R/W and secure M/W; echo-system inside the company integrating with Solution, System, and Device Groups.
June 2003
General Manager, FRAM Business Division, Fujitsu Ltd
- Innovated FRAM to semiconductor industry for the first time in the world and established leading position in the market by exploiting FRAM embedded CMOS LSI products for security and smartcard applications
- Led strategic collaboration with ST Microelectronics for FRAM contact-less smartcard applications. Also established alliance with Mobile-Mind to develop Multi-application COS for 3G SIM application
Dec. 1997
Technology transfer and Commercialization of GaAs LSIs as R&D Manager, Fujitsu laboratories Ltd, and Director in Business Unit, Fujitsu Ltd
- Successful technology transfer from Laboratories to Business Unit, resulting in world-first commercialization of GaAs LSI from fully dedicated manufacturing factory
- Made a strong contribution to the development of highest speed Fujitsu VP5000 super-computer in the world as well as one with Convex Computer, USA, based on the “Mutual second source agreement” with VITESS
- Guided R&D team to establish leading position in the telecom area; highlights are 60GHz mm-wave Radar with HEMT and high power InGaP HBT amplifiers for mobile-phones as well as for 10 Gbps fiber-optic applications
Dec 1982
Research Engineer, Fujitsu Laboratories Ltd
- R&D in ion-implantation technique for Si and later for GaAs devices, contributed to many device applications including IMPATT diode, Ge and InP photo-detectors, and CMOS threshold-voltage control and S-D formation, both later introduced to the CMOS LSI production lines.
- Active research member of R&D Collaboration program for Ion-Implantation carried out among five companies including Matsushita, Mitsubishi, Sanyo, and Sharp Electronics under MITI supports in ’70-75
- Visiting Applied Scientist for COMSAT Laboratories (USA) in ’77-79, where worked as a Contract Manger for High-power GaAs FET amplifier for Satellite Communications. Also studied Ta2O5 thin films for GaAs surface passivation aiming to MOS and solar cell applications.
- Many publications for the solid-state surface and thin film analysis using high-energy RBS and channeling techniques
Education:* Tokyo Institute of Technology, 1983
* Nagoya University, 1970
Degrees:* Ph.D. Doctorial Thesis entitled “A study on the electrical activation of the Ion-Implanted atoms correlating with implantation induced defects”
* B.Sc. Nuclear Engineering
Project Wanted:Market Entry Support for a Technology Company
Project Length:6~ months
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